? 2003 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1000 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c 100 a v ge = 0 v t j = 125 c 3.0 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15 3.5 v t j = 125 c 2.6 v igbt lightspeed series symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1000 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c30a i c90 t c = 90 c15a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g ds98647b(01/03) features ? international standard packages jedec to-220ab and to-263aa ? low switching losses ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies advantages ? easy to mount with one screw ? reduces assembly time and cost ? high power density g e c (tab) to-263 aa (ixga) g c e to-220ab (ixgp) v ces =1000 v i c25 = 30 a v ce(sat) = 3.5 v t fi(typ) = 115 ns ixga 15n100c ixgp 15n100c free datasheet http://www.datasheetlist.com/
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 to-263 aa outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side to-220 ab dimensions symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 12 16 s pulse test, t 300 s, duty cycle 2 % c ies 1720 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 95 pf c res 35 pf q g 73 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 26 nc t d(on) 25 ns t ri 15 ns t d(off) 150 200 ns t fi 101 160 ns e off 0.85 1.40 mj t d(on) 25 ns t ri 18 ns e on 0.60 mj t d(off) 220 ns t fi 210 ns e off 1.85 mj r thjc 0.83 k/w r thck to-220 0.5 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 10 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 10 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixga 15n100c ixgp 15n100c min. recommended footprint (dimensions in inches and mm) free datasheet http://www.datasheetlist.com/
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